Page 5 - Molecules for Charge-Based Information Storage

Molecules for Charge-Based Information Storage Lindsey and Bocian

FIGURE 4. Triple deckers (monomer and dyad).

device performance. (1) The monolayer stability/robustness Semiconductor fabrication processes often entail excur-
ultimately determines the device viability under conditions sions at temperatures reaching as high as 400 °C. We
of manufacture and operation. (2) The surface binding/ subjected a porphyrin monolayer formed (covalent SiOC
adsorption geometry influences the charge densities that linkage) on a Si(100) platform to a temperature of 400 °C for
are achievable. (3) The electron-transfer rates dictate the 30 min under inert atmosphere conditions. 25 The voltam-
read/write speed of the memory cell. (4) The charge-retention metric response of the porphyrin monolayer is identical to
times dictate the refresh rates of the memory cell and, hence, that of porphyrin monolayers that have not been subjected
affect power consumption. to elevated temperatures and demonstrates that molecular

642 ’ ACCOUNTS OF CHEMICAL RESEARCH ’ 638–650 ’ 2011 ’ Vol. 44, No. 8